BAR 63-04 E6327

BAR63... Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance (low insertion loss) • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BAR63-02.. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W !  ,  ! ,  ,  Type BAR63-02L* BAR63-02V BAR63-02W BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W 1*BAR63-02L BAR63-06 BAR63-06W ! ,  Package TSLP-2-1 SC79 SCD80 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 ,  ,  Configuration single, leadless single single single series series common cathode common cathode common anode common anode LS(nH) 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 Marking G G GG white G G4s G4s G5s G5s G6s G6s is not qualified according AEC Q101 1 2011-07-18 BAR63... Maximum Ratings at T A = 25°C, unless otherwise specified Symbol Parameter Value Unit Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation Ptot mW BAR63-02L, T S ≤ 118°C 250 BAR63-02V, -02W, BAR63-03W, TS ≤ 115°C 250 BAR63-04...BAR63-06, T S ≤ 55°C 250 BAR63-04S, TS ≤ 115°C 250 BAR63-04W...BAR63-06W, TS ≤ 105°C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BAR63-02L ≤ 125 BAR63-02V, BAR63-02W ≤ 140 BAR63-03W ≤ 155 BAR63-04...BAR63-06 ≤ 380 BAR63-04S ≤ 180 BAR63-04W...BAR63-06W ≤ 180 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 50 - - V IR - - 10 nA VF - 0.95 1.2 V DC Characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current VR = 35 V Forward voltage IF = 100 mA 1For calculation of RthJA please refer to the Technical Information 2 2011-07-18 BAR63... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 5 V, f = 1 MHz - 0.21 0.3 VR = 0 V, 100 MHz ... 1.8 GHz - 0.3 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 500 - VR = 0 V, f = 1 GHz - 15 - VR = 0 V, f = 1.8 GHz - 5 - Forward resistance Ω rf IF = 5 mA, f = 100 MHz - 1.2 2 IF = 10 mA, f = 100 MHz - 1 - τ rr - 75 - ns I-region width WI - 4.5 - µm Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 1 mA, f = 1.8 GHz - 0.15 - IF = 5 mA, f = 1.8 GHz - 0.11 - IF = 10 mA, f = 1.8 GHz - 0.1 - VR = 0 V, f = 0.9 GHz - 17.9 - VR = 0 V, f = 1.8 GHz - 12.3 - VR = 0 V, f = 2.45 GHz - 10 - - - - Isolation1) ISO Series inductance 1BAR63-02L LS in series configuration, Z = 50Ω 3 2011-07-18 BAR63... Diode capacitance CT = ƒ (VR ) Reverse parallel resistance RP = ƒ(VR) f = 1MHz - 1.8GHz f = Parameter CT 10 3 EHD07139 0.5 100 MHz KOhm pF 0.4 10 2 Rp 1 GHz 0.3 10 1 1.8 GHz 0.2 10 0 0.1 0 0 10 V VR 20 10 -1 0 30 5 10 15 Forward current IF = ƒ (VF) f = 100MHz TA = Parameter rf 30 VR Forward resistance rf = ƒ (IF) EHD07138 10 2 V 20 ΙF Ω 10 3 mA EHD07171 BAR 63... 10 2 10 1 10 1 10 0 25 ˚C 40 ˚C 85 ˚C 10 -1 10 0 10 -2 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -3 0.3 2 ΙF 0.5 0.8 1 V 1.2 VF 4 2011-07-18 BAR63... Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAR63-04...BAR63-06 BAR63-02V, BAR63-02W 120 120 mA mA IF 80 IF 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAR63-03W BAR63-04W...BAR63-06W 120 120 mA mA IF 80 IF 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 TS 15 30 45 60 75 90 105 120 °C 150 TS 5 2011-07-18 BAR63... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR63-04...BAR63-06 IFmax/ IFDC = ƒ (t p) BAR63-04...BAR63-06 R thJS EHB07146 5 K/W Ι F max 10 Ι F DC 5 EHB07147 2 tP t D= P T T 10 2 D= 0.5 0.2 0.1 0.05 0.05 0.01 0.005 0 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 5 tP D= 10 0 10 -6 10 -5 10 -4 tP T 10 T -3 10 -2 s tP 10 10 0 10 -6 0 10 -5 10 -4 10 -3 Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR63-02V, BAR63-02W IFmax/ IFDC = ƒ (t p) 10 -2 s tP 10 0 s 10 BAR63-02V, BAR63-02W 10 1 10 3 IFmax/ IFDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 0 tp 6 2011-07-18 BAR63... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR63-03W IFmax/ IFDC = ƒ (t p) BAR63-03W 10 10 1 3 IFmax/ IFDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR63-04W...BAR63-06W IFmax/ IFDC = ƒ (t p) BAR63-04W...BAR63-06W 10 3 10 3 - IFmax/ IFDC RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 7 2011-07-18 BAR63... Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21 |2 = ƒ(f) IF = Parameter VR = Paramter BAR63-02L in series configuration, Z = 50Ω BAR63-02L in series configuration, Z = 50Ω 0 0 dB |S21|² |S21|² 10 mA dB 5 mA -10 1 mA -0.2 -15 0V 1V 10 V -20 -0.3 -25 -0.4 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 8 2011-07-18 Package SC79 9 BAR63... 2011-07-18 Package SCD80 BAR63... Package Outline 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 0.2 ±0.05 10˚MAX. 1.7 ±0.1 1 0.3 ±0.05 Cathode marking 7˚ ±1.5˚ 1.3 ±0.1 A 2 0.7 ±0.1 0.35 1.45 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Reel with 2 mm Pitch 2 0.2 2.5 8 1.45 Standard 4 Cathode marking 0.4 0.9 Cathode marking 10 0.7 2011-07-18 BAR63... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 11 2011-07-18 Package SOD323 12 BAR63... 2011-07-18 Package SOT23 BAR63... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 13 2011-07-18 Package SOT323 BAR63... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 14 2011-07-18 Package TSLP-2-1 15 BAR63... 2011-07-18 BAR63... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 2011-07-18